tm august 2006 FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode ?2006 fairchild semiconductor corporation FDFS6N754 rev. a www.fairchildsemi.com 1 final datasheet FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode 30v, 4a, 56m ? features ? max r ds(on) = 56m ? at v gs = 0v, i d = 4a max r ds(on) = 75m ? at v gs = 4.5v, i d = 3.5a ? v f < 0.45v @ 2a v f < 0.28v @ 100ma ? schottky and mosfet incor porated into single power surface mount so-8 package ? electrically independent sc hottky and mosfet pinout for design flexibility ? low gate charge (qg = 4nc) ? low miller charge general description the FDFS6N754 combines the exceptional performance of fairchild's powertrench mosf et technology with a very low forward voltage drop schottky barrier rectifier in an so- 8 package. this device is designed specif ically as a single package solution for dc to dc converters. it features a fast switching, low gate charge mosfet with very low on-state resistance. the independently connected schottky diode allows its use in a variety of dc/dc converter topologies. applications ? dc/dc converters mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 4 a -pulsed 20 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 v rrm schottky repetitive peak reverse voltage 20 v i o schottky average forward current (note 1a) 2 a t j , t stg operating and storage temperature -55 to 150 c r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w device marking device package reel size tape width quantity FDFS6N754 FDFS6N754 so-8 330mm 12mm 2500 units a a s g c c d d pin 1 so-8 8 1 7 2 6 3 5 4 a a s g c c d d
FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode FDFS6N754 rev. a www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics (note 2) drain-source diode characteristics and maximum ratings schottky diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c 24.5 mv/c i dss zero gate voltage drain current v ds = 24v v gs = 0v 1 a t j = 125c 20 i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a11.72.5v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25c -4.2 mv/c r ds(on) drain to source on resistance v gs = 10v, i d = 4a 42 56 m ? v gs = 4.5v, i d =3.5a 53 75 v gs = 10v, i d = 4a, t j = 125c 61 81 g fs forward transconductance v ds = 5v, i d = 4a 10 s c iss input capacitance v ds = 15v, v gs = 0v, f = 1.0mhz 225 299 pf c oss output capacitance 80 107 pf c rss reverse transfer capacitance 42 63 pf r g gate resistance f = 1.0mhz 5.1 ? t d(on) turn-on delay time v dd = 15v, i d = 1a v gs = 10v, r gs = 6 ? 612ns t r rise time 816ns t d(off) turn-off delay time 20 32 ns t f fall time 210ns q g(tot) total gate charge at 10v v ds = 15v, i d = 4a 46nc q g(5) total gate charge at 5v 2 3 nc q gs gate to source gate charge 0.6 nc q gd gate to drain ?miller? charge 1 nc v sd source to drain diode forward voltage v gs = 0v, i s = 1.3a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 4a, di/dt = 100a/ s1320ns q rr reverse recovery charge i f = 4a, di/dt = 100a/ s46nc v r reverse breakdown voltage i r = -1ma -30 v i r reverse leakage v r = -10v t j = 25 o c 39 250 a t j = 125 o c18ma v f forward voltage i f = 100ma t j = 25 o c 225 280 mv t j = 125 o c 140 i f = 2a t j = 25 o c 364 450 t j = 125 o c 290
FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode FDFS6N754 rev. a www.fairchildsemi.com 3 notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user?s board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width < 300 s, duty cycle < 2.0% . c) 135 c/w when mounted on a minimun pad a) 78 c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125 c/w when mounted on a 0.02 in 2 pad of 2 oz copper
FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode FDFS6N754 rev. a www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. 0.00.51.01.52.02.53.0 0 5 10 15 20 pulse duration = 300 s duty cycle = 2.0%max v gs = 6v v gs = 2.5v v gs = 10v v gs = 5v v gs = 4.5v v gs = 3.5v v gs = 3v i d , drain current (a) v ds , drain to source voltage ( v ) on region characteristics figure 2. 4 8 12 16 20 0.5 1.0 1.5 2.0 2.5 3.0 1 v gs = 10v v gs = 6v v gs = 5v v gs = 4.5v v gs = 3.5v v gs = 3.0v pulse duration = 300 s duty cycle = 2.0%max normalized drain to source on-resistance i d , drain current(a) on-resistance vs drain current and gate voltage figure 3. -60-300 306090120150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 4a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) on resistance vs temperature figure 4. 246810 0.00 0.05 0.10 0.15 0.20 pulse duration = 300 s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = 3a r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage (v) on-resistance vs ga te to source voltage figure 5. 12345 0 4 8 12 16 20 v ds = 5v pulse duration = 300 s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1e-3 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) source to drain diode forward voltage vs source current
FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode FDFS6N754 rev. a www.fairchildsemi.com 5 figure 7. gate charge characteri 012345 0 2 4 6 8 10 v dd = 20v v dd = 15v v dd = 10v v gs , gate to source voltage (v) q g , gate charge (nc) stics figure 8. capacitance vs drain to source voltage 0.1 1 10 100 40 500 20 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss figure 9. unclamped inductive switching capability 0.01 0.1 1 1 2 3 4 5 6 7 8 9 10 t j = 25 o c i as , avalanche current(a) t av , time in avalanche(ms) 2 figure 10. maximum cont inuous drain current vs case temperature 25 50 75 100 125 150 0 1 2 3 4 5 6 v gs = 10v i d , drain current (a) t c , case temperature ( o c ) r jc = 40 o c/w v gs = 4.5v figure 11. forward bi as safe operating area 0.1 1 10 0.01 0.1 1 10 100 operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c 80 10us 1ms dc 10s 1s 100ms 10ms 100us i d , drain current ( a ) v ds , drain-source voltage (v) figure 12. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - typical characteristics t j = 25c unless otherwise noted
FDFS6N754 integrated n-channel powertrench ? mosfet and schottky diode FDFS6N754 rev. a www.fairchildsemi.com 6 figure 13. 0.00.20.40.60.81.01.2 1e-3 0.01 0.1 1 10 100 t j = 25 o c t j = 125 o c i f , forward leakage current (a) v f , forward voltage (v) schottky diode forward voltage figure 14. 0 5 10 15 20 25 30 1e-6 1e-5 1e-4 1e-3 0.01 0.1 t j = 25 o c t j = 125 o c 20 i r , reverse leakage current (a) v r , reverse volatge(v) schottky diode reverse current figure 15. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 2 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 typical characteristics t j = 25c unless otherwise noted
FDFS6N754 rev. a www.fairchildsemi.com 7 FDFS6N754 integrated n- channel powertrench ? mosfet and schottky diode trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functio n or design. fairchild does not assum e any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains t he design specifications for product development. specif ications may change in any manner without notice. preliminary first production this data sheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datash eet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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